International Rectifier JANSR2N7471T1 MOSFET – LOT OF 6

✅ Key Specifications

• Type: N-channel enhancement-mode MOSFET, single element, TO‑254AA through-hole

• Breakdown Voltage (BVDSS): 100 V

• Max Continuous Drain Current: 45 A

• On‑Resistance (RDS(on)): typically 13 mΩ @ VGS = 12 V, max 14 mΩ

• Power Dissipation: ~208 W

• Gate Charge (Qg): around 160 nC

• Temperature Range: –55 °C to +150 °C junction

🛰️ Radiation & Space Qualification

• Qualified to MIL‑PRF‑19500 (JANS screening), space-grade manufacturing

• Total Ionizing Dose (TID): 100 krad(Si)

• Hardened for single-event effects (SEE); typical protection at LET ≥84 MeV·cm²/mg

• Hermetically sealed, ceramic body, includes gate ESD protection rated at Class 3B

🔧 Thermal & Switching Characteristics

• Thermal Resistance (RθJC): ~0.6 °C/W

• Diode Forward Voltage: ~1.2 V @ 45 A

• Reverse Recovery Time (trr): ~270 ns

• Robust avalanche tolerance, peak dv/dt up to 6.7 V/ns

📌 Typical Applications

• Space-grade power switching and DC–DC converters

• Motor controls in high-radiation environments

• Any high-reliability scenario requiring rugged thermal, avalanche, and radiation performance