SVT Associates In-Situ 4000 AccuTemp process monitor

Product Description

SVT Associates In-Situ 4000 AccuTemp Process Monitor – Real-Time Temperature and Film Thickness Measurement for MBE and MOCVD

This used SVT Associates In-Situ 4000 AccuTemp Process Monitor is a sophisticated optical instrument designed for real-time monitoring of both substrate temperature and film thickness during thin film growth processes such as MBE (Molecular Beam Epitaxy) and MOCVD (Metal-Organic Chemical Vapor Deposition) . The system combines traditional pyrometry with specular reflectometry to provide accurate, real-time process information using a single normal-incidence view-port .

Key Specifications

Key Features & Capabilities

Real-Time Dual Measurement:
The AccuTemp system provides real-time and accurate information on substrate temperature, film thickness, and growth rate using a single normal incidence view-port . The optional Growth Rate and Film Index Fitter software module provides real-time growth rate, film thickness, and index of refraction .

Emissivity Compensated Pyrometry:
The In-Situ 4000 uses a 950 nm reflectometer matched to the pyrometry system, allowing emissivity compensation via the relation ℇ = 1 – R . This provides an emissivity-independent temperature measurement, solving the problem of unknown or shifting emissivity during film growth .

Two-Color (Ratio) Pyrometry:
For cases where viewport coating occurs (common in GaAs epitaxy with arsenic), the system measures intensity at both 950 nm and 850 nm. The ratio of the two intensities is unaffected by metallic coatings, allowing accurate temperature calibration to be maintained .

Dual-Wavelength Reflectometry:
Two independent optical reflectometer signals (950 nm and 470 nm) are analyzed to provide thickness, growth rate, and refractive index in real-time . This allows accurate measurement even when depositing dielectric films on transparent substrates .

Bandgap Module (Optional):
The optional Bandgap Module allows for monitoring of low substrate temperatures (room temperature to 700°C) and easy calibration of the pyrometer . It is particularly useful for materials such as GaAs, GaSb, and Si .

Closed-Loop Control:
The system can be interfaced with a PID controller for substrate temperature control via analog signal, and can provide control for up to four material source shutters with digital signal outputs .

Applications

• MBE Growth: VCSEL, GaN, InGaAsN, AlGaN, and other compound semiconductors

• MOCVD Growth: VCSEL, LED, Optical Coatings, InP Laser, GaN, AlGaN

• CIGS Source Monitoring: For thin-film solar cell production

• R&D and Production Environments: Versatile enough for both research and production use

Supported Materials

Typical application materials include GaN, GaAs, ZnO, CIGS, Si, ZnTe, SiC, MCT, and STO .

Condition

SOLD AS IS
USED – SHOWS NORMAL LABORATORY HANDLING
FUNCTIONALITY NOT TESTED
NO SOFTWARE CD OR DOCUMENTATION INCLUDED (unless specified)
COMPUTER NOT INCLUDED
PICTURE MAY NOT MATCH PRODUCT

⚠ SYSTEM NOTE: This is a specialized semiconductor process monitor requiring compatible software (Windows XP environment) and proper optical alignment for operation . Sold as-is without guarantee of functionality. Intended for semiconductor fabrication professionals familiar with MBE/MOCVD systems.