Key Specifications
| Parameter | Value |
|---|---|
| Type | NPN Silicon Power Transistor |
| Collector-Emitter Voltage (VCEX / VCES) | ~ 400 V |
| Collector-Base Voltage | 400 V |
| Emitter-Base Voltage | ~ 5 V |
| Continuous Collector Current (IC) | 10 A |
| Power Dissipation (Pd) | 125 W at case temperature 25 °C |
| Gain Bandwidth Product (fT) | ~ 2.5 MHz |
| Operating Junction Temperature | −65 °C to +150 °C |
| Weight | 2 lbs |
|---|---|
| Dimensions | 8 × 6 × 4 in |
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