Onsemi NJVMJB44H11T4G Transistor – LOT OF 110

🧩 Key Specifications

• Type: NPN bipolar junction transistor (BJT), single configuration, surface-mount D2PAK (TO‑263‑3) package

• Collector–Emitter Voltage (Vₓₑₒ): 80 V

• Continuous Collector Current (Iₓc): 10 A; Peak rated at 20 A

• Power Dissipation (Pᴅ): up to 50 W (at case temp = 25 °C), derating ~0.4 W/°C above that

• Collector–Emitter Saturation Voltage (Vₓₑₛₐₜ): ≤1.0 V at 8 A, Base–Emitter Saturation (Vᴮᴱₛₐₜ): ≤1.5 V

• DC Current Gain (hₙₑ): ≥60 at 2 A, ≥40 at 4 A

• Transition Frequency (f_T): ~50 MHz

• Operating Junction Temperature: –55 °C to +150 °C (AEC‑Q101 qualified)

• Switching Speed: rise time + fall time ~300 ns; storage time ~500 ns

🔧 Features & Applications

• Low VCE(sat) and fast switching make it ideal for:

  • Power switching regulators

  • Motor and power-driver stages

  • Amplification in switching converters

• Automotive-ready: NJV prefix indicates AEC‑Q101 qualification and PPAP support