NXP Semiconductors MRFE6VP61K25H RF Power LDMOS Transistor

Type & Capabilities
The MRFE6VP61K25H is a high-ruggedness, wideband RF power lateral-diffused MOSFET (LDMOS) transistor designed for demanding applications. It operates across a broad frequency range of 1.8 MHz to 600 MHz, delivering up to 1250 W of continuous-wave (CW) power at 50 V supply voltage.

Features

• Unmatched input/output design for wideband use

• Operable in both single-ended and push-pull configurations

• Suitable for linear applications with appropriate biasing

• Integrated ESD protection with extended negative gate-source voltage range (beneficial for Class C operation).

Applications
Commonly employed in environments demanding high VSWR tolerance—such as laser and plasma exciters, broadcast systems (analog/digital), aerospace, and radio/land mobile systems