AXT InP 10H1Z00040021 indium phosphide substrate

Product Description

AXT InP 10H1Z00040021 – Indium Phosphide (InP) Semiconductor Substrate – Research/Grade

A high-quality indium phosphide (InP) semiconductor substrate from AXT (American Xtal Technology) , a leading manufacturer of compound semiconductor materials. The 10H1Z00040021 is a specialized substrate designed for epitaxial growth and device fabrication in optoelectronic, RF/microwave, and high-speed electronic applications. InP offers superior electron mobility and direct bandgap properties essential for lasers, photodetectors, HEMTs, and HBTs.

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🔍 Key Specifications:

📡 Material & Specifications:

• Manufacturer: AXT (American Xtal Technology)

• Part Number: 10H1Z00040021

• Material: Indium Phosphide (InP) – III-V compound semiconductor

• Type: Semiconductor substrate (for epitaxial growth)

• Diameter: Typically 2″, 3″, or 4″ – verify specific size from part number/labeling

• Orientation: (100) or miscut – typical for InP device fabrication

• Dopant: Undoped (semi-insulating) or Fe-doped – verify by part number

• Resistivity: High (semi-insulating) for RF devices, or low for optoelectronic

• Surface Finish: One side polished (epi-ready), one side etched/ground

• Thickness: Standard substrate thickness (350–650 µm typical)

🔧 Physical Specifications:

• Shape: Circular wafer

• Edge: Ground/flat (primary flat or notch for orientation)

• Packaging: Originally in cleanroom-grade container (if present)

• Condition: Surplus – visually inspected, unopened container if sealed

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⚙️ Why InP Substrates are Critical:

🔬 Superior Material Properties:
Indium phosphide offers:

• High electron mobility – faster devices, higher frequencies

• Direct bandgap – efficient light emission/detection

• High breakdown field – high-power RF devices

• Thermal conductivity – better than GaAs for power applications

📡 Key Applications:

• Optoelectronics: Laser diodes (telecom 1310/1550nm), photodetectors, modulators

• RF/Microwave: HEMTs, HBTs for mm-wave, 5G, radar

• High-speed electronics: Digital circuits, mixed-signal ICs

• Photovoltaics: High-efficiency multi-junction solar cells

🏭 Semiconductor Manufacturing:
InP substrates are used for:

• Epitaxial growth (MBE, MOCVD) of device layers

• Device fabrication – lithography, etching, metallization

• Research & development – new materials, device concepts

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🛠️ Potential Applications (If Suitable):

🔬 Research & Development:

• Epitaxial growth experiments – test new material combinations

• Device prototyping – fabricate test structures

• Material characterization – study InP properties

📡 Optoelectronic Device Fabrication:

• Telecom lasers – 1310nm/1550nm edge-emitting or VCSELs

• Photodetectors – PIN, APD for fiber optic receivers

• Modulators – electro-absorption, Mach-Zehnder

📶 RF/Microwave Devices:

• HEMTs – low-noise amplifiers, power amplifiers

• HBTs – high-linearity amplifiers, oscillators

• mm-wave ICs – 5G, automotive radar, satellite comms

🔋 Photovoltaics:

• Multi-junction solar cells – space and concentrated PV

• Tandem cells – with GaAs, InGaAs layers

🧪 Educational Use:

• University semiconductor labs – hands-on processing experience

• Training – epitaxy, lithography, device fabrication