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Type & Capabilities
The MRFE6VP61K25H is a high-ruggedness, wideband RF power lateral-diffused MOSFET (LDMOS) transistor designed for demanding applications. It operates across a broad frequency range of 1.8 MHz to 600 MHz, delivering up to 1250 W of continuous-wave (CW) power at 50 V supply voltage. -
Features
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Unmatched input/output design for wideband use
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Operable in both single-ended and push-pull configurations
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Suitable for linear applications with appropriate biasing
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Integrated ESD protection with extended negative gate-source voltage range (beneficial for Class C operation).
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Applications
Commonly employed in environments demanding high VSWR tolerance—such as laser and plasma exciters, broadcast systems (analog/digital), aerospace, and radio/land mobile systems
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